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Title: Application of optical processing for growth of silicon dioxide

Abstract

A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.

Inventors:
Issue Date:
Research Org.:
Midwest Research Institute
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
512440
Patent Number(s):
5,639,520
Application Number:
PAN: 8-592,600
Assignee:
Midwest Research Inst., Kansas City, MO (United States) GFO; SCA: 360601; PA: EDB-97:112248; SN: 97001827940
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 17 Jun 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON OXIDES; FABRICATION; SUBSTRATES; CONTROLLED ATMOSPHERES; INFRARED RADIATION; VISIBLE RADIATION

Citation Formats

Sopori, B.L. Application of optical processing for growth of silicon dioxide. United States: N. p., 1997. Web.
Sopori, B.L. Application of optical processing for growth of silicon dioxide. United States.
Sopori, B.L. Tue . "Application of optical processing for growth of silicon dioxide". United States.
@article{osti_512440,
title = {Application of optical processing for growth of silicon dioxide},
author = {Sopori, B.L.},
abstractNote = {A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {6}
}