Method of fabricating a (1223) Tl-Ba-Ca-Cu-O superconductor
Abstract
A method is disclosed for fabricating a polycrystalline <223> thallium-containing superconductor having high critical current at elevated temperatures and in the presence of a magnetic field. A powder precursor containing compounds other than thallium is compressed on a substrate. Thallium is incorporated in the densified powder precursor at a high temperature in the presence of a partial pressure of a thallium-containing vapor. 2 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 512428
- Patent Number(s):
- 5646097
- Application Number:
- PAN: 8-573,602
- Assignee:
- General Electric Co., Schenectady, NY (United States)
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 8 Jul 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; FABRICATION; THALLIUM OXIDES; BARIUM OXIDES; CALCIUM OXIDES; COPPER OXIDES; HIGH-TC SUPERCONDUCTORS; MAGNETIC FIELDS
Citation Formats
Tkaczyk, J E, Lay, K W, and He, Q. Method of fabricating a (1223) Tl-Ba-Ca-Cu-O superconductor. United States: N. p., 1997.
Web.
Tkaczyk, J E, Lay, K W, & He, Q. Method of fabricating a (1223) Tl-Ba-Ca-Cu-O superconductor. United States.
Tkaczyk, J E, Lay, K W, and He, Q. Tue .
"Method of fabricating a (1223) Tl-Ba-Ca-Cu-O superconductor". United States.
@article{osti_512428,
title = {Method of fabricating a (1223) Tl-Ba-Ca-Cu-O superconductor},
author = {Tkaczyk, J E and Lay, K W and He, Q},
abstractNote = {A method is disclosed for fabricating a polycrystalline <223> thallium-containing superconductor having high critical current at elevated temperatures and in the presence of a magnetic field. A powder precursor containing compounds other than thallium is compressed on a substrate. Thallium is incorporated in the densified powder precursor at a high temperature in the presence of a partial pressure of a thallium-containing vapor. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {7}
}
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