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Title: Dry etching method for compound semiconductors

Abstract

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Inventors:
;
Issue Date:
Research Org.:
Sandia Corporation
OSTI Identifier:
504964
Patent Number(s):
5,624,529
Application Number:
PAN: 8-437,532
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 29 Apr 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ETCHING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR DEVICES; CHEMICAL COMPOSITION; PLASMA

Citation Formats

Shul, R J, and Constantine, C. Dry etching method for compound semiconductors. United States: N. p., 1997. Web.
Shul, R J, & Constantine, C. Dry etching method for compound semiconductors. United States.
Shul, R J, and Constantine, C. Tue . "Dry etching method for compound semiconductors". United States.
@article{osti_504964,
title = {Dry etching method for compound semiconductors},
author = {Shul, R J and Constantine, C},
abstractNote = {A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {4}
}