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Title: Dry etching method for compound semiconductors

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.
Inventors:
;
Issue Date:
OSTI Identifier:
504964
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 360601; 426000; PA: EDB-97:098920; SN: 97001815610
Patent Number(s):
US 5,624,529/A/
Application Number:
PAN: 8-437,532
Contract Number:
AC04-94AL85000
Resource Relation:
Other Information: PBD: 29 Apr 1997
Research Org:
Sandia Corporation
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ETCHING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR DEVICES; CHEMICAL COMPOSITION; PLASMA