Dry etching method for compound semiconductors

Shul, R J; Constantine, C

Title: Dry etching method for compound semiconductors

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Abstract

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Inventors:: Shul, R J; Constantine, C

Issue Date:: 1997-04-29

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 504964

Patent Number(s):: 5624529

Application Number:: PAN: 8-437,532

Assignee:: Sandia Corp., Albuquerque, NM (United States)

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Other Information: PBD: 29 Apr 1997

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ETCHING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR DEVICES; CHEMICAL COMPOSITION; PLASMA

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                    Shul, R J, and Constantine, C. Dry etching method for compound semiconductors.  United States: N. p., 1997. 
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                    Shul, R J, & Constantine, C. Dry etching method for compound semiconductors.  United States.

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                    Shul, R J, and Constantine, C. Tue .  
        "Dry etching method for compound semiconductors".  United States.

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@article{osti_504964,

  title        = {Dry etching method for compound semiconductors},

  author       = {Shul, R J and Constantine, C},

  abstractNote = {A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1997},

  month        = {4}

}

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