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Title: Infrared emitting device and method

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
504961
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426000; PA: EDB-97:100229; SN: 97001815601
Patent Number(s):
US 5,625,635/A/
Application Number:
PAN: 8-345,160
Contract Number:
AC04-94AL85000
Resource Relation:
Other Information: PBD: 29 Apr 1997
Research Org:
Sandia Corporation
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; LIGHT EMITTING DIODES; SEMICONDUCTOR LASERS; INFRARED RADIATION; DESIGN; FABRICATION; SEMICONDUCTOR MATERIALS