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Title: Method for processing silicon solar cells

Abstract

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
504929
Patent Number(s):
5,627,081
Application Number:
PAN: 8-346,010
Assignee:
Midwest Research Inst., Kansas City, MO (United States) PTO; SCA: 140905; 140501; PA: EDB-97:096088; SN: 97001815590
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 6 May 1997
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; SOLAR PROCESS HEAT; FABRICATION; SOLAR FURNACES; SILICON; MATERIALS WORKING; TEXTURE; GETTERING; PASSIVATION; USES

Citation Formats

Tsuo, Y.S., Landry, M.D., and Pitts, J.R. Method for processing silicon solar cells. United States: N. p., 1997. Web.
Tsuo, Y.S., Landry, M.D., & Pitts, J.R. Method for processing silicon solar cells. United States.
Tsuo, Y.S., Landry, M.D., and Pitts, J.R. Tue . "Method for processing silicon solar cells". United States.
@article{osti_504929,
title = {Method for processing silicon solar cells},
author = {Tsuo, Y.S. and Landry, M.D. and Pitts, J.R.},
abstractNote = {The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {5}
}