Molybdenum enhanced low-temperature deposition of crystalline silicon nitride
Abstract
A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 5048429
- Patent Number(s):
- 5300322
- Application Number:
- PPN: US 7-849542
- Assignee:
- Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10 Mar 1992
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON NITRIDES; CHEMICAL VAPOR DEPOSITION; MIXTURES; MOLYBDENUM SILICIDES; THERMAL DEGRADATION; CHEMICAL COATING; DEPOSITION; DISPERSIONS; MOLYBDENUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication
Citation Formats
Lowden, R A. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride. United States: N. p., 1994.
Web.
Lowden, R A. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride. United States.
Lowden, R A. Tue .
"Molybdenum enhanced low-temperature deposition of crystalline silicon nitride". United States.
@article{osti_5048429,
title = {Molybdenum enhanced low-temperature deposition of crystalline silicon nitride},
author = {Lowden, R A},
abstractNote = {A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {4}
}
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