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Title: Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.
Inventors:
Issue Date:
OSTI Identifier:
5048429
Assignee:
Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States) PTO; EDB-94-075915
Patent Number(s):
US 5300322; A
Application Number:
PPN: US 7-849542
Contract Number:
AC05-84OR21400
Resource Relation:
Patent File Date: 10 Mar 1992
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; CHEMICAL VAPOR DEPOSITION; MIXTURES; MOLYBDENUM SILICIDES; THERMAL DEGRADATION; CHEMICAL COATING; DEPOSITION; DISPERSIONS; MOLYBDENUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication