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Title: Unitary lens semiconductor device

Abstract

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Inventors:
Issue Date:
Research Org.:
Sandia Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
489103
Patent Number(s):
5,633,527
Application Number:
PAN: 8-384,089
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426000; PA: EDB-97:086842; SN: 97001799044
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 27 May 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; LAYERS; DESIGN; SEMICONDUCTOR LASERS; LIGHT EMITTING DIODES; PHOTODETECTORS; SEMICONDUCTOR MATERIALS

Citation Formats

Lear, K.L. Unitary lens semiconductor device. United States: N. p., 1997. Web.
Lear, K.L. Unitary lens semiconductor device. United States.
Lear, K.L. Tue . "Unitary lens semiconductor device". United States.
@article{osti_489103,
title = {Unitary lens semiconductor device},
author = {Lear, K.L.},
abstractNote = {A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {5}
}