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Title: SEMICONDUCTOR-DETECTOR HAVING A LITHIUM COMPENSATED SHELF REGION BETWEEN OPPOSITE CONDUCTIVITY TYPE REGIONS.

Inventors:
;
Issue Date:
Research Org.:
Originating Research Org. not identified
OSTI Identifier:
4834600
Patent Number(s):
3413529
Assignee:
(to United States Atomic Energy Commission). DTIE; NSA-23-002577
NSA Number:
NSA-23-002577
Resource Type:
Patent
Resource Relation:
Other Information: Orig. Receipt Date: 31-DEC-69
Country of Publication:
United States
Language:
English
Subject:
N26110* -Instrumentation-Radiation Detection Instruments- General Detectors & Monitors; CHARGED PARTICLES; DETECTION; DIFFUSION; GAMMA DETECTION; IMPURITIES; LITHIUM; SEMICONDUCTOR COUNTERS; SEMICONDUCTORS; SOLID-STATE COUNTERS; CHARGED PARTICLES/detection of, design of thick lithium-compensated semiconductor detectors for; GAMMA RADIATION/detection of, design of thick lithium-compensated semiconductor detectors for; RADIATION DETECTORS, SEMICONDUCTOR/design of thick lithium-compensated

Citation Formats

Goulding, F.S., and Lothrop, R.P. SEMICONDUCTOR-DETECTOR HAVING A LITHIUM COMPENSATED SHELF REGION BETWEEN OPPOSITE CONDUCTIVITY TYPE REGIONS.. United States: N. p., 1968. Web.
Goulding, F.S., & Lothrop, R.P. SEMICONDUCTOR-DETECTOR HAVING A LITHIUM COMPENSATED SHELF REGION BETWEEN OPPOSITE CONDUCTIVITY TYPE REGIONS.. United States.
Goulding, F.S., and Lothrop, R.P. Mon . "SEMICONDUCTOR-DETECTOR HAVING A LITHIUM COMPENSATED SHELF REGION BETWEEN OPPOSITE CONDUCTIVITY TYPE REGIONS.". United States.
@article{osti_4834600,
title = {SEMICONDUCTOR-DETECTOR HAVING A LITHIUM COMPENSATED SHELF REGION BETWEEN OPPOSITE CONDUCTIVITY TYPE REGIONS.},
author = {Goulding, F.S. and Lothrop, R.P.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1968},
month = {1}
}