METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES
Abstract
A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)
- Inventors:
- Issue Date:
- Research Org.:
- Originating Research Org. not identified
- OSTI Identifier:
- 4833626
- Patent Number(s):
- 3002852
- Assignee:
- U.S. Atomic Energy Commission
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
G - PHYSICS G21 - NUCLEAR PHYSICS G21C - NUCLEAR REACTORS
- NSA Number:
- NSA-15-031162
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-61
- Country of Publication:
- United States
- Language:
- English
- Subject:
- METALS, CERAMICS, AND OTHER MATERIALS; CHEMICAL REACTIONS; COATING; DECOMPOSITION; HEATING; LAYERS; RHENIUM COMPOUNDS; SILICIDES; SILICON; SURFACES; TANTALUM; TANTALUM COMPOUNDS; THICKNESS; VAPORS
Citation Formats
Bowman, M G, and Krikorian, N H. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES. United States: N. p., 1961.
Web.
Bowman, M G, & Krikorian, N H. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES. United States.
Bowman, M G, and Krikorian, N H. Sun .
"METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES". United States.
@article{osti_4833626,
title = {METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES},
author = {Bowman, M G and Krikorian, N H},
abstractNote = {A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1961},
month = {10}
}
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