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Title: METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

Abstract

A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

Inventors:
;
Issue Date:
OSTI Identifier:
4833626
Patent Number(s):
3002852
Assignee:
U.S. Atomic Energy Commission
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
NSA Number:
NSA-15-031162
Resource Type:
Patent
Resource Relation:
Other Information: Orig. Receipt Date: 31-DEC-61
Country of Publication:
United States
Language:
English
Subject:
METALS, CERAMICS, AND OTHER MATERIALS; CHEMICAL REACTIONS; COATING; DECOMPOSITION; HEATING; LAYERS; RHENIUM COMPOUNDS; SILICIDES; SILICON; SURFACES; TANTALUM; TANTALUM COMPOUNDS; THICKNESS; VAPORS

Citation Formats

Bowman, M G, and Krikorian, N H. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES. United States: N. p., 1961. Web.
Bowman, M G, & Krikorian, N H. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES. United States.
Bowman, M G, and Krikorian, N H. Sun . "METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES". United States.
@article{osti_4833626,
title = {METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES},
author = {Bowman, M G and Krikorian, N H},
abstractNote = {A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1961},
month = {10}
}