Diamond film growth from fullerene precursors
Abstract
A method and system are disclosed for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate. 10 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Chicago, IL (United States)
- OSTI Identifier:
- 462859
- Patent Number(s):
- 5620512
- Application Number:
- PAN: 8-143,866
- Assignee:
- Univ. of Chicago, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 15 Apr 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; DIAMONDS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED COATINGS; PRECURSOR; FULLERENES
Citation Formats
Gruen, D M, Liu, S, Krauss, A R, and Pan, X. Diamond film growth from fullerene precursors. United States: N. p., 1997.
Web.
Gruen, D M, Liu, S, Krauss, A R, & Pan, X. Diamond film growth from fullerene precursors. United States.
Gruen, D M, Liu, S, Krauss, A R, and Pan, X. Tue .
"Diamond film growth from fullerene precursors". United States.
@article{osti_462859,
title = {Diamond film growth from fullerene precursors},
author = {Gruen, D M and Liu, S and Krauss, A R and Pan, X},
abstractNote = {A method and system are disclosed for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {4}
}