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Title: Diamond film growth from fullerene precursors

A method and system are disclosed for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate. 10 figs.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
462859
Assignee:
Univ. of Chicago, IL (United States) PTO; SCA: 360601; PA: EDB-97:062062; SN: 97001767251
Patent Number(s):
US 5,620,512/A/
Application Number:
PAN: 8-143,866
Contract Number:
W-31109-ENG-38
Resource Relation:
Other Information: PBD: 15 Apr 1997
Research Org:
Univ. of Chicago, IL (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIAMONDS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED COATINGS; PRECURSOR; FULLERENES