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Title: Diamond film growth from fullerene precursors

Abstract

A method and system are disclosed for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate. 10 figs.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of Chicago, IL (United States)
OSTI Identifier:
462859
Patent Number(s):
5,620,512
Application Number:
PAN: 8-143,866
Assignee:
Univ. of Chicago, IL (United States)
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 15 Apr 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIAMONDS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED COATINGS; PRECURSOR; FULLERENES

Citation Formats

Gruen, D M, Liu, S, Krauss, A R, and Pan, X. Diamond film growth from fullerene precursors. United States: N. p., 1997. Web.
Gruen, D M, Liu, S, Krauss, A R, & Pan, X. Diamond film growth from fullerene precursors. United States.
Gruen, D M, Liu, S, Krauss, A R, and Pan, X. Tue . "Diamond film growth from fullerene precursors". United States.
@article{osti_462859,
title = {Diamond film growth from fullerene precursors},
author = {Gruen, D M and Liu, S and Krauss, A R and Pan, X},
abstractNote = {A method and system are disclosed for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {4}
}