METHOD FOR PRODUCING P-I-N SEMICONDUCTORS
- Inventors:
- Issue Date:
- Research Org.:
- Originating Research Org. not identified
- OSTI Identifier:
- 4615505
- Patent Number(s):
- 3212940
- Assignee:
- U.S. Atomic Energy Commission
- NSA Number:
- NSA-20-001580
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-66
- Country of Publication:
- United States
- Language:
- English
- Subject:
- GENERAL AND MISCELLANEOUS; DIFFUSION; ELECTRIC FIELDS; FABRICATION; LITHIUM; SEMICONDUCTORS; SILICON; SURFACES; TRAPS
Citation Formats
Blankenship, J L. METHOD FOR PRODUCING P-I-N SEMICONDUCTORS. United States: N. p., 1965.
Web.
Blankenship, J L. METHOD FOR PRODUCING P-I-N SEMICONDUCTORS. United States.
Blankenship, J L. Tue .
"METHOD FOR PRODUCING P-I-N SEMICONDUCTORS". United States.
@article{osti_4615505,
title = {METHOD FOR PRODUCING P-I-N SEMICONDUCTORS},
author = {Blankenship, J L},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1965},
month = {10}
}
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