METHOD FOR PRODUCING P-I-N SEMICONDUCTORS

Title: METHOD FOR PRODUCING P-I-N SEMICONDUCTORS

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Inventors:: Blankenship, J.L.

Issue Date:: 1965-10-19

Research Org.:: Originating Research Org. not identified

OSTI Identifier:: 4615505

Patent Number(s):: 3212940

Assignee:: U.S. Atomic Energy Commission DTIE; NSA-20-001580

NSA Number:: NSA-20-001580

Resource Type:: Patent

Resource Relation:: Other Information: Orig. Receipt Date: 31-DEC-66

Country of Publication:: United States

Language:: English

Subject:: GENERAL AND MISCELLANEOUS; DIFFUSION; ELECTRIC FIELDS; FABRICATION; LITHIUM; SEMICONDUCTORS; SILICON; SURFACES; TRAPS

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                    Blankenship, J.L. METHOD FOR PRODUCING P-I-N SEMICONDUCTORS.  United States: N. p., 1965. 
        Web.

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                    Blankenship, J.L. METHOD FOR PRODUCING P-I-N SEMICONDUCTORS.  United States.

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                    Blankenship, J.L. Tue .  
        "METHOD FOR PRODUCING P-I-N SEMICONDUCTORS".  United States.

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@article{osti_4615505,

  title        = {METHOD FOR PRODUCING P-I-N SEMICONDUCTORS},

  author       = {Blankenship, J.L.},

  abstractNote = {},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1965},

  month        = {10}

}

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