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Title: METHOD FOR PRODUCING P-I-N SEMICONDUCTORS

Inventors:
Issue Date:
Research Org.:
Originating Research Org. not identified
OSTI Identifier:
4615505
Patent Number(s):
3212940
Assignee:
U.S. Atomic Energy Commission
Patent Classifications (CPCs):
G - PHYSICS G21 - NUCLEAR PHYSICS G21C - NUCLEAR REACTORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
NSA Number:
NSA-20-001580
Resource Type:
Patent
Resource Relation:
Other Information: Orig. Receipt Date: 31-DEC-66
Country of Publication:
United States
Language:
English
Subject:
GENERAL AND MISCELLANEOUS; DIFFUSION; ELECTRIC FIELDS; FABRICATION; LITHIUM; SEMICONDUCTORS; SILICON; SURFACES; TRAPS

Citation Formats

Blankenship, J L. METHOD FOR PRODUCING P-I-N SEMICONDUCTORS. United States: N. p., 1965. Web.
Blankenship, J L. METHOD FOR PRODUCING P-I-N SEMICONDUCTORS. United States.
Blankenship, J L. Tue . "METHOD FOR PRODUCING P-I-N SEMICONDUCTORS". United States.
@article{osti_4615505,
title = {METHOD FOR PRODUCING P-I-N SEMICONDUCTORS},
author = {Blankenship, J L},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1965},
month = {10}
}

Patent:
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