METHOD FOR FORMING P-N JUNCTIONS ON SEMICONDUCTORS
- Inventors:
- Issue Date:
- Research Org.:
- Originating Research Org. not identified
- OSTI Identifier:
- 4597399
- Patent Number(s):
- 3194701
- Assignee:
- U.S. Atomic Energy Commission
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- NSA Number:
- NSA-19-033708
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-65
- Country of Publication:
- United States
- Language:
- English
- Subject:
- GENERAL AND MISCELLANEOUS; COATING; CONFIGURATION; CONTROL; DIFFUSION; DISTILLATION; FURNACES; GAS FLOW; GERMANIUM; INERT GASES; JOINTS; JUNCTIONS; LAYERS; PHOSPHORUS; PHOSPHORUS OXIDES; PLANNING; PREPARATION; SEMICONDUCTORS; SILICON; SURFACES; TEMPERATURE; THICKNESS; WATER
Citation Formats
Lothrop, R P. METHOD FOR FORMING P-N JUNCTIONS ON SEMICONDUCTORS. United States: N. p., 1965.
Web.
Lothrop, R P. METHOD FOR FORMING P-N JUNCTIONS ON SEMICONDUCTORS. United States.
Lothrop, R P. Tue .
"METHOD FOR FORMING P-N JUNCTIONS ON SEMICONDUCTORS". United States.
@article{osti_4597399,
title = {METHOD FOR FORMING P-N JUNCTIONS ON SEMICONDUCTORS},
author = {Lothrop, R P},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1965},
month = {7}
}
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