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Title: Method of forming electrical pathways in indium-tin-oxide coatings

Abstract

An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

Inventors:
Issue Date:
Research Org.:
Lockheed Martin Energy Syst Inc
OSTI Identifier:
445705
Patent Number(s):
5,607,731
Application Number:
PAN: 8-631,727
Assignee:
Lockheed Martin Energy Systems, Inc., Oak Ridge, TN (United States)
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 4 Mar 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ELECTRIC CONTACTS; INDIUM OXIDES; TIN OXIDES; FABRICATION; SURFACE COATING; ELECTRICAL INSULATION

Citation Formats

Haynes, T E. Method of forming electrical pathways in indium-tin-oxide coatings. United States: N. p., 1997. Web.
Haynes, T E. Method of forming electrical pathways in indium-tin-oxide coatings. United States.
Haynes, T E. Tue . "Method of forming electrical pathways in indium-tin-oxide coatings". United States.
@article{osti_445705,
title = {Method of forming electrical pathways in indium-tin-oxide coatings},
author = {Haynes, T E},
abstractNote = {An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {3}
}