Process of preparing tritiated porous silicon

Title: Process of preparing tritiated porous silicon

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A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

Inventors:: Tam, S.W.

Issue Date:: 1997-02-18

OSTI Identifier:: 441854

Assignee:: Univ. of Chicago, IL (United States) PTO; SCA: 070201; PA: INS-97:004432; EDB-97:039254; SN: 97001739248

Patent Number(s):: US 5,604,162/A/

Application Number:: PAN: 8-671,325

Contract Number:: W-31109-ENG-38

Resource Relation:: Other Information: PBD: 18 Feb 1997

Research Org:: Univ. of Chicago, IL (United States)

Country of Publication:: United States

Language:: English

Subject:: 07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY; RADIATION SOURCES; SILICON; PORE STRUCTURE; HYDROGEN; TRITIUM; IMPREGNATION; FABRICATION; ISOTOPIC EXCHANGE

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