Process of preparing tritiated porous silicon
Abstract
A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Chicago, IL (United States)
- OSTI Identifier:
- 441854
- Patent Number(s):
- 5604162
- Application Number:
- PAN: 8-671,325
- Assignee:
- Univ. of Chicago, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 18 Feb 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY; RADIATION SOURCES; SILICON; PORE STRUCTURE; HYDROGEN; TRITIUM; IMPREGNATION; FABRICATION; ISOTOPIC EXCHANGE
Citation Formats
Tam, S W. Process of preparing tritiated porous silicon. United States: N. p., 1997.
Web.
Tam, S W. Process of preparing tritiated porous silicon. United States.
Tam, S W. Tue .
"Process of preparing tritiated porous silicon". United States.
@article{osti_441854,
title = {Process of preparing tritiated porous silicon},
author = {Tam, S W},
abstractNote = {A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 18 00:00:00 EST 1997},
month = {Tue Feb 18 00:00:00 EST 1997}
}
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