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Title: Process of preparing tritiated porous silicon

Abstract

A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

Inventors:
Issue Date:
Research Org.:
Univ. of Chicago, IL (United States)
OSTI Identifier:
441854
Patent Number(s):
5,604,162
Application Number:
PAN: 8-671,325
Assignee:
Univ. of Chicago, IL (United States)
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 18 Feb 1997
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY; RADIATION SOURCES; SILICON; PORE STRUCTURE; HYDROGEN; TRITIUM; IMPREGNATION; FABRICATION; ISOTOPIC EXCHANGE

Citation Formats

Tam, S W. Process of preparing tritiated porous silicon. United States: N. p., 1997. Web.
Tam, S W. Process of preparing tritiated porous silicon. United States.
Tam, S W. Tue . "Process of preparing tritiated porous silicon". United States.
@article{osti_441854,
title = {Process of preparing tritiated porous silicon},
author = {Tam, S W},
abstractNote = {A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {2}
}