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Title: Process of preparing tritiated porous silicon

A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.
Inventors:
Issue Date:
OSTI Identifier:
441854
Assignee:
Univ. of Chicago, IL (United States) PTO; SCA: 070201; PA: INS-97:004432; EDB-97:039254; SN: 97001739248
Patent Number(s):
US 5,604,162/A/
Application Number:
PAN: 8-671,325
Contract Number:
W-31109-ENG-38
Resource Relation:
Other Information: PBD: 18 Feb 1997
Research Org:
Univ. of Chicago, IL (United States)
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY; RADIATION SOURCES; SILICON; PORE STRUCTURE; HYDROGEN; TRITIUM; IMPREGNATION; FABRICATION; ISOTOPIC EXCHANGE