METHOD OF ETCHING TANTALUM AND NIOBIUM FOR ELECTROPLATING.
- Inventors:
- Issue Date:
- Research Org.:
- Originating Research Org. not identified
- OSTI Identifier:
- 4409262
- Patent Number(s):
- 3314867
- Assignee:
- (to U. S. Atomic Energy Commission). DTIE; NSA-21-026779
- NSA Number:
- NSA-21-026779
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-67
- Country of Publication:
- United States
- Language:
- English
- Subject:
- N30120* -Metals, Ceramics, & Other Materials-Metals & Alloys-Preparation & Fabrication; ELECTROCHEMISTRY; ELECTRODEPOSITION; ETCHING; HYDROCHLORIC ACID; HYDROFLUORIC ACID; METALS; METHANOL; NIOBIUM; SURFACES; TANTALUM
Citation Formats
Seegmiller, R., and Gore, J.K. METHOD OF ETCHING TANTALUM AND NIOBIUM FOR ELECTROPLATING.. United States: N. p., 1967.
Web.
Seegmiller, R., & Gore, J.K. METHOD OF ETCHING TANTALUM AND NIOBIUM FOR ELECTROPLATING.. United States.
Seegmiller, R., and Gore, J.K. Sun .
"METHOD OF ETCHING TANTALUM AND NIOBIUM FOR ELECTROPLATING.". United States.
@article{osti_4409262,
title = {METHOD OF ETCHING TANTALUM AND NIOBIUM FOR ELECTROPLATING.},
author = {Seegmiller, R. and Gore, J.K.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1967},
month = {1}
}
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