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Title: VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR

Abstract

This patent relates to transistor oscillators and in particular to those transistor oscillators whose frequencies vary according to controlling voltages. A principal feature of the disclosed transistor oscillator circuit resides in the temperature compensation of the frequency modulating stage by the use of a resistorthermistor network. The resistor-thermistor network components are selected to have the network resistance, which is in series with the modulator transistor emitter circuit, vary with temperature to compensate for variation in the parameters of the transistor due to temperature change.

Inventors:
Issue Date:
Research Org.:
Originating Research Org. not identified
OSTI Identifier:
4281653
Patent Number(s):
2852746
Assignee:
U.S. Atomic Energy Commission DTIE; NSA-13-004361
NSA Number:
NSA-13-004361
Resource Type:
Patent
Resource Relation:
Other Information: Orig. Receipt Date: 31-DEC-59
Country of Publication:
United States
Language:
English
Subject:
PATENTS; CIRCUITS; CONTROL SYSTEMS; ELECTRIC POTENTIAL; FREQUENCY; MODULATION; OSCILLATIONS; OSCILLATORS; PARAMETERS; RESISTORS; RESONANCE; SEMICONDUCTORS; STABILITY; TEMPERATURE; THERMISTORS; TRANSISTORS; VARIATIONS

Citation Formats

Scheele, P.F. VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR. United States: N. p., 1958. Web.
Scheele, P.F. VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR. United States.
Scheele, P.F. Tue . "VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR". United States.
@article{osti_4281653,
title = {VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR},
author = {Scheele, P.F.},
abstractNote = {This patent relates to transistor oscillators and in particular to those transistor oscillators whose frequencies vary according to controlling voltages. A principal feature of the disclosed transistor oscillator circuit resides in the temperature compensation of the frequency modulating stage by the use of a resistorthermistor network. The resistor-thermistor network components are selected to have the network resistance, which is in series with the modulator transistor emitter circuit, vary with temperature to compensate for variation in the parameters of the transistor due to temperature change.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1958},
month = {9}
}