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Title: PRESSURE TRANSDUCER

Abstract

A pressure or mechanical force transducer particularly adaptable to miniature telemetering systems is described. Basically the device consists of a transistor located within a magnetic field adapted to change in response to mechanical force. The conduction characteristics of the transistor in turn vary proportionally with changes in the magnetic flux across the transistor such that the output (either frequency of amplitude) of the transistor circuit is proportional to mechanical force or pressure.

Inventors:
Issue Date:
Research Org.:
Originating Research Org. not identified
OSTI Identifier:
4174960
Patent Number(s):
2907897
Assignee:
U.S. Atomic Energy Commission
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01L - MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
H - ELECTRICITY H04 - ELECTRIC COMMUNICATION TECHNIQUE H04R - LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS
NSA Number:
NSA-14-007608
Resource Type:
Patent
Resource Relation:
Other Information: Orig. Receipt Date: 31-DEC-60
Country of Publication:
United States
Language:
English
Subject:
ENGINEERING AND EQUIPMENT; CIRCUITS; COMMUNICATIONS; MAGNETIC FIELDS; MEASURED VALUES; MECHANICS; PRESSURE; REMOTE CONTROL; TRANSDUCERS; VARIATIONS

Citation Formats

Sander, H H. PRESSURE TRANSDUCER. United States: N. p., 1959. Web.
Sander, H H. PRESSURE TRANSDUCER. United States.
Sander, H H. Thu . "PRESSURE TRANSDUCER". United States.
@article{osti_4174960,
title = {PRESSURE TRANSDUCER},
author = {Sander, H H},
abstractNote = {A pressure or mechanical force transducer particularly adaptable to miniature telemetering systems is described. Basically the device consists of a transistor located within a magnetic field adapted to change in response to mechanical force. The conduction characteristics of the transistor in turn vary proportionally with changes in the magnetic flux across the transistor such that the output (either frequency of amplitude) of the transistor circuit is proportional to mechanical force or pressure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Oct 01 00:00:00 EDT 1959},
month = {Thu Oct 01 00:00:00 EDT 1959}
}

Patent:
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