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Title: Method for improving the toughness of silicon carbide-based ceramics

Abstract

Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.

Inventors:
;
Issue Date:
Research Org.:
Lockheed Martin Energy Syst Inc
OSTI Identifier:
415774
Patent Number(s):
5,580,510
Application Number:
PAN: 8-166,675
Assignee:
Univ. of Michigan, Ann Arbor, MI (United States)
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 3 Dec 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; FRACTURE PROPERTIES; HOT PRESSING; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; SILICON NITRIDES; MICROSTRUCTURE

Citation Formats

Tein, T Y, and Hilmas, G E. Method for improving the toughness of silicon carbide-based ceramics. United States: N. p., 1996. Web.
Tein, T Y, & Hilmas, G E. Method for improving the toughness of silicon carbide-based ceramics. United States.
Tein, T Y, and Hilmas, G E. Tue . "Method for improving the toughness of silicon carbide-based ceramics". United States.
@article{osti_415774,
title = {Method for improving the toughness of silicon carbide-based ceramics},
author = {Tein, T Y and Hilmas, G E},
abstractNote = {Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {12}
}