Method for improving the toughness of silicon carbide-based ceramics
Abstract
Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 415774
- Patent Number(s):
- 5580510
- Application Number:
- PAN: 8-166,675
- Assignee:
- Univ. of Michigan, Ann Arbor, MI (United States)
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 3 Dec 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON CARBIDES; FRACTURE PROPERTIES; HOT PRESSING; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; SILICON NITRIDES; MICROSTRUCTURE
Citation Formats
Tein, T Y, and Hilmas, G E. Method for improving the toughness of silicon carbide-based ceramics. United States: N. p., 1996.
Web.
Tein, T Y, & Hilmas, G E. Method for improving the toughness of silicon carbide-based ceramics. United States.
Tein, T Y, and Hilmas, G E. Tue .
"Method for improving the toughness of silicon carbide-based ceramics". United States.
@article{osti_415774,
title = {Method for improving the toughness of silicon carbide-based ceramics},
author = {Tein, T Y and Hilmas, G E},
abstractNote = {Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {12}
}
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