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Title: Method for improving the toughness of silicon carbide-based ceramics

Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.
Inventors:
;
Issue Date:
OSTI Identifier:
415774
Assignee:
Univ. of Michigan, Ann Arbor, MI (United States) PTO; SCA: 360201; 360203; PA: EDB-97:015100; SN: 97001714629
Patent Number(s):
US 5,580,510/A/
Application Number:
PAN: 8-166,675
Contract Number:
AC05-84OR21400
Resource Relation:
Other Information: PBD: 3 Dec 1996
Research Org:
Lockheed Martin Energy Syst Inc
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; FRACTURE PROPERTIES; HOT PRESSING; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; SILICON NITRIDES; MICROSTRUCTURE

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