Title: GUARD RING SEMICONDUCTOR JUNCTION

Abstract

A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

Inventors:

Goulding, F S; Hansen, W L

Issue Date:

1963-12-01

Research Org.:

Originating Research Org. not identified

OSTI Identifier:

4131778

Patent Number(s):

3113220

Assignee:

U. S. Atomic Energy Commission

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/76 - Making of isolation regions between components
H01L27/00 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02 - including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier
H01L27/04 - the substrate being a semiconductor body
H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer
H01L29/40 - Electrodes {
H01L29/86 - controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Show less

NSA Number:

NSA-18-004076

Resource Type:

Patent

Resource Relation:

Other Information: Orig. Receipt Date: 31-DEC-64

Country of Publication:

United States

Language:

English

Subject:

INSTRUMENTATION; CIRCUITS; CURRENTS; DIODES; LEAKS; NOISE; SEMICONDUCTORS; SURFACES