DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for making circular tubular channels with two silicon wafers

Abstract

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si{sub 3}N{sub 4}) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO{sub 3}/CH{sub 3}COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary. 11 figs.

Inventors:
;
Issue Date:
Research Org.:
Univ. of California (United States)
OSTI Identifier:
403669
Patent Number(s):
5575929
Application Number:
PAN: 8-464,020
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 19 Nov 1996
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; FABRICATION; GRAIN ORIENTATION; MASKING; ETCHING; MINIATURIZATION

Citation Formats

Yu, C M, and Hui, W C. Method for making circular tubular channels with two silicon wafers. United States: N. p., 1996. Web.
Yu, C M, & Hui, W C. Method for making circular tubular channels with two silicon wafers. United States.
Yu, C M, and Hui, W C. Tue . "Method for making circular tubular channels with two silicon wafers". United States.
@article{osti_403669,
title = {Method for making circular tubular channels with two silicon wafers},
author = {Yu, C M and Hui, W C},
abstractNote = {A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si{sub 3}N{sub 4}) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO{sub 3}/CH{sub 3}COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary. 11 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 19 00:00:00 EST 1996},
month = {Tue Nov 19 00:00:00 EST 1996}
}

Patent:
Search for the full text at the U.S. Patent and Trademark Office Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)

Save / Share: