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Title: Radiation-tolerant imaging device

A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO{sub 2} insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron`s generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO{sub 2} layer. 7 figs.
Inventors:
;
Issue Date:
OSTI Identifier:
403668
Assignee:
Dept. of Energy, Washington, DC (United States) PTO; SCA: 426000; 440000; PA: EDB-97:004240; SN: 96001695589
Patent Number(s):
US 5,576,561/A/
Application Number:
PAN: 8-291,085
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 19 Nov 1996
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; CHARGE-COUPLED DEVICES; DESIGN; SEMICONDUCTOR MATERIALS; IONIZING RADIATIONS; CHARGE COLLECTION; IMAGES; SILICON OXIDES; CHARGE CARRIERS; DEPLETION LAYER

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