BONDING ALUMINUM METALS
Abstract
A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 4002274
- Patent Number(s):
- 2987816
- Assignee:
- U.S. Atomic Energy Commission
- Patent Classifications (CPCs):
-
G - PHYSICS G21 - NUCLEAR PHYSICS G21C - NUCLEAR REACTORS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- NSA Number:
- NSA-15-019821
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-61
- Country of Publication:
- United States
- Language:
- English
- Subject:
- METALS, CERAMICS, AND OTHER MATERIALS; ALUMINUM; ALUMINUM COMPOUNDS; ALUMINUM OXIDES; BONDING; CLEANING; COATING; FILMS; FRICTION; HEATING; POWDERS; PRESSURE; SILICIDES; SILICON
Citation Formats
Noland, R A, and Walker, D E. BONDING ALUMINUM METALS. United States: N. p., 1961.
Web.
Noland, R A, & Walker, D E. BONDING ALUMINUM METALS. United States.
Noland, R A, and Walker, D E. Tue .
"BONDING ALUMINUM METALS". United States.
@article{osti_4002274,
title = {BONDING ALUMINUM METALS},
author = {Noland, R A and Walker, D E},
abstractNote = {A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1961},
month = {6}
}
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