Multi-gap high impedance plasma opening switch
Abstract
A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 392657
- Patent Number(s):
- 5568019
- Application Number:
- PAN: 8-349,337
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 22 Oct 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; PLASMA SWITCHES; DESIGN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; USES
Citation Formats
Mason, R J. Multi-gap high impedance plasma opening switch. United States: N. p., 1996.
Web.
Mason, R J. Multi-gap high impedance plasma opening switch. United States.
Mason, R J. Tue .
"Multi-gap high impedance plasma opening switch". United States.
@article{osti_392657,
title = {Multi-gap high impedance plasma opening switch},
author = {Mason, R J},
abstractNote = {A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {10}
}
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