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Title: Broad beam ion implanter

Abstract

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

Inventors:
Issue Date:
Research Org.:
University of California
OSTI Identifier:
379942
Patent Number(s):
5,563,418
Application Number:
PAN: 8-362,074
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 8 Oct 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ION BEAMS; BEAM PRODUCTION; MATERIALS; ION IMPLANTATION; DOPED MATERIALS; ION SOURCES; CRYSTAL DOPING

Citation Formats

Leung, K N. Broad beam ion implanter. United States: N. p., 1996. Web.
Leung, K N. Broad beam ion implanter. United States.
Leung, K N. Tue . "Broad beam ion implanter". United States.
@article{osti_379942,
title = {Broad beam ion implanter},
author = {Leung, K N},
abstractNote = {An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {10}
}