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Title: Broad beam ion implanter

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.
Inventors:
Issue Date:
OSTI Identifier:
379942
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 360101; 360201; 360601; PA: EDB-96:150459; SN: 96001674304
Patent Number(s):
US 5,563,418/A/
Application Number:
PAN: 8-362,074
Contract Number:
AC03-76SF00098
Resource Relation:
Other Information: PBD: 8 Oct 1996
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ION BEAMS; BEAM PRODUCTION; MATERIALS; ION IMPLANTATION; DOPED MATERIALS; ION SOURCES; CRYSTAL DOPING

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