Broad beam ion implanter
Abstract
An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 379942
- Patent Number(s):
- 5563418
- Application Number:
- PAN: 8-362,074
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 8 Oct 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ION BEAMS; BEAM PRODUCTION; MATERIALS; ION IMPLANTATION; DOPED MATERIALS; ION SOURCES; CRYSTAL DOPING
Citation Formats
Leung, K N. Broad beam ion implanter. United States: N. p., 1996.
Web.
Leung, K N. Broad beam ion implanter. United States.
Leung, K N. Tue .
"Broad beam ion implanter". United States.
@article{osti_379942,
title = {Broad beam ion implanter},
author = {Leung, K N},
abstractNote = {An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {10}
}