Global to push GA events into
skip to main content

Title: Process for forming retrograde profiles in silicon

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
Inventors:
;
Issue Date:
OSTI Identifier:
379937
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 360601; 360602; PA: EDB-96:150793; SN: 96001674298
Patent Number(s):
US 5,565,377/A/
Application Number:
PAN: 8-329,959
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 15 Oct 1996
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; CRYSTAL DOPING; MELTING; AMBIENT TEMPERATURE; LASER RADIATION; SURFACE TREATMENTS; MORPHOLOGY