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Title: Process for forming retrograde profiles in silicon

Abstract

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Inventors:
;
Issue Date:
Research Org.:
University of California
OSTI Identifier:
379937
Patent Number(s):
5,565,377
Application Number:
PAN: 8-329,959
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 15 Oct 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; CRYSTAL DOPING; MELTING; AMBIENT TEMPERATURE; LASER RADIATION; SURFACE TREATMENTS; MORPHOLOGY

Citation Formats

Weiner, K H, and Sigmon, T W. Process for forming retrograde profiles in silicon. United States: N. p., 1996. Web.
Weiner, K H, & Sigmon, T W. Process for forming retrograde profiles in silicon. United States.
Weiner, K H, and Sigmon, T W. Tue . "Process for forming retrograde profiles in silicon". United States.
@article{osti_379937,
title = {Process for forming retrograde profiles in silicon},
author = {Weiner, K H and Sigmon, T W},
abstractNote = {A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {10}
}