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Title: Pulsed source ion implantation apparatus and method

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.
Inventors:
Issue Date:
OSTI Identifier:
378141
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 360101; 360201; 360601; PA: EDB-96:150466; SN: 96001666719
Patent Number(s):
US 5,558,718/A/
Application Number:
PAN: 8-225,043
Contract Number:
AC03-76SF00098
Resource Relation:
Other Information: PBD: 24 Sep 1996
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MATERIALS; ION IMPLANTATION; EQUIPMENT; DESIGN; CRYSTAL DOPING; ELECTRIC POTENTIAL; PLASMA PRODUCTION; ION SOURCES; ELECTRIC CONDUCTIVITY; ELECTRICAL INSULATORS