Pulsed source ion implantation apparatus and method

Leung, K N

Title: Pulsed source ion implantation apparatus and method

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Abstract

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

Inventors:: Leung, K N

Issue Date:: 1996-09-24

Research Org.:: Univ. of California (United States)

OSTI Identifier:: 378141

Patent Number(s):: 5558718

Application Number:: PAN: 8-225,043

Assignee:: Univ. of California, Oakland, CA (United States)

DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Resource Relation:: Other Information: PBD: 24 Sep 1996

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; MATERIALS; ION IMPLANTATION; EQUIPMENT; DESIGN; CRYSTAL DOPING; ELECTRIC POTENTIAL; PLASMA PRODUCTION; ION SOURCES; ELECTRIC CONDUCTIVITY; ELECTRICAL INSULATORS

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                    Leung, K N. Pulsed source ion implantation apparatus and method.  United States: N. p., 1996. 
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                    Leung, K N. Pulsed source ion implantation apparatus and method.  United States.

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                    Leung, K N. Tue .  
        "Pulsed source ion implantation apparatus and method".  United States.

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@article{osti_378141,

  title        = {Pulsed source ion implantation apparatus and method},

  author       = {Leung, K N},

  abstractNote = {A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1996},

  month        = {9}

}

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