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Title: Method of forming crystalline silicon devices on glass

Abstract

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Inventors:
Issue Date:
Research Org.:
University of California
OSTI Identifier:
35080
Patent Number(s):
5,399,231
Application Number:
PAN: 8-137,411
Assignee:
bUniv. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 21 Mar 1995
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; FABRICATION; MONOCRYSTALS; USES; MICROELECTRONICS; MEASURING INSTRUMENTS

Citation Formats

McCarthy, A M. Method of forming crystalline silicon devices on glass. United States: N. p., 1995. Web.
McCarthy, A M. Method of forming crystalline silicon devices on glass. United States.
McCarthy, A M. Tue . "Method of forming crystalline silicon devices on glass". United States.
@article{osti_35080,
title = {Method of forming crystalline silicon devices on glass},
author = {McCarthy, A M},
abstractNote = {A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {3}
}