Substrate for thin silicon solar cells
Abstract
A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.
- Inventors:
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 35059
- Patent Number(s):
- 5401331
- Application Number:
- PAN: 8-116,849
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 28 Mar 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; SUBSTRATES; SILICON ALLOYS; ELECTRIC CONDUCTIVITY; BORON ALLOYS; PHOTOVOLTAIC CONVERSION; INTERMETALLIC COMPOUNDS
Citation Formats
Ciszek, T F. Substrate for thin silicon solar cells. United States: N. p., 1995.
Web.
Ciszek, T F. Substrate for thin silicon solar cells. United States.
Ciszek, T F. Tue .
"Substrate for thin silicon solar cells". United States.
@article{osti_35059,
title = {Substrate for thin silicon solar cells},
author = {Ciszek, T F},
abstractNote = {A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 28 00:00:00 EST 1995},
month = {Tue Mar 28 00:00:00 EST 1995}
}
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