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Title: Substrate for thin silicon solar cells

Abstract

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Inventors:
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
35059
Patent Number(s):
5,401,331
Application Number:
PAN: 8-116,849
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 28 Mar 1995
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; SUBSTRATES; SILICON ALLOYS; ELECTRIC CONDUCTIVITY; BORON ALLOYS; PHOTOVOLTAIC CONVERSION; INTERMETALLIC COMPOUNDS

Citation Formats

Ciszek, T F. Substrate for thin silicon solar cells. United States: N. p., 1995. Web.
Ciszek, T F. Substrate for thin silicon solar cells. United States.
Ciszek, T F. Tue . "Substrate for thin silicon solar cells". United States.
@article{osti_35059,
title = {Substrate for thin silicon solar cells},
author = {Ciszek, T F},
abstractNote = {A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {3}
}