High efficiency low cost thin film silicon solar cell design and method for making
Abstract
A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt,more »
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 350315
- Patent Number(s):
- 5897331
- Application Number:
- PAN: 8-745,951
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 27 Apr 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SILICON SOLAR CELLS; DESIGN; FABRICATION; SUBSTRATES; DEPOSITION; HEAT TREATMENTS; GRAIN SIZE; SILICON
Citation Formats
Sopori, B. L. High efficiency low cost thin film silicon solar cell design and method for making. United States: N. p., 1999.
Web.
Sopori, B. L. High efficiency low cost thin film silicon solar cell design and method for making. United States.
Sopori, B. L. Tue .
"High efficiency low cost thin film silicon solar cell design and method for making". United States.
@article{osti_350315,
title = {High efficiency low cost thin film silicon solar cell design and method for making},
author = {Sopori, B. L.},
abstractNote = {A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {4}
}