Electrochemical formation of field emitters
Abstract
Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 335496
- Patent Number(s):
- 5882503
- Application Number:
- PAN: 8-847,086
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 16 Mar 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; FIELD EMISSION; DISPLAY DEVICES; FABRICATION; METALS; ELECTROCHEMICAL COATING; ETCHING
Citation Formats
Bernhardt, A F. Electrochemical formation of field emitters. United States: N. p., 1999.
Web.
Bernhardt, A F. Electrochemical formation of field emitters. United States.
Bernhardt, A F. Tue .
"Electrochemical formation of field emitters". United States.
@article{osti_335496,
title = {Electrochemical formation of field emitters},
author = {Bernhardt, A F},
abstractNote = {Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {3}
}
Works referenced in this record:
Low-voltage field emission from tungsten fiber arrays in a stabilized zirconia matrix
journal, June 1987
- Cochran, J. K.; Chapman, A. T.; Hill, D. N.
- Journal of Materials Research, Vol. 2, Issue 3
Vacuum microelectronics-1992
journal, June 1992
- Busta, H. H.
- Journal of Micromechanics and Microengineering, Vol. 2, Issue 2