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Title: VO{sub 2} precipitates for self-protected optical surfaces

Abstract

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al{sub 2}O{sub 3}), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at ca. 77 C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ``switchable`` surface region on Al{sub 2}O{sub 3}. 5 figs.

Inventors:
;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
335489
Patent Number(s):
5885665
Application Number:
PAN: 8-853,947
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 23 Mar 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; VANADIUM OXIDES; ION IMPLANTATION; SAPPHIRE; PRECIPITATION; CRYSTAL-PHASE TRANSFORMATIONS; OPTICAL PROPERTIES; FABRICATION

Citation Formats

Gea, L A, and Boatner, L A. VO{sub 2} precipitates for self-protected optical surfaces. United States: N. p., 1999. Web.
Gea, L A, & Boatner, L A. VO{sub 2} precipitates for self-protected optical surfaces. United States.
Gea, L A, and Boatner, L A. Tue . "VO{sub 2} precipitates for self-protected optical surfaces". United States.
@article{osti_335489,
title = {VO{sub 2} precipitates for self-protected optical surfaces},
author = {Gea, L A and Boatner, L A},
abstractNote = {A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al{sub 2}O{sub 3}), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at ca. 77 C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ``switchable`` surface region on Al{sub 2}O{sub 3}. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {3}
}

Works referenced in this record:

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journal, January 1983


Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
journal, July 1959


Optical induction and detection of fast phase transition in VO2
journal, May 1971


Optical Properties of V O 2 between 0.25 and 5 eV
journal, August 1968


Fast laser kinetic studies of the semiconductor-metal phase transition in VO2 thin films
conference, January 1979


Femtosecond switching of the solid state phase transition in the smart-system material VO<formula><inf><roman>2</roman></inf></formula>
conference, May 1994

  • Becker, Michael F.; Buckman, A. B.; Walser, Rodger M.
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  • https://doi.org/10.1117/12.174076

A 10.6 ┬Ám scan laser with programmable VO 2 mirror
journal, December 1979


Optical switching of coherent VO 2 precipitates formed in sapphire by ion implantation and annealing
journal, May 1996


Optical storage in VO 2 films
journal, October 1973