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Title: Process for making a cesiated diamond film field emitter and field emitter formed therefrom

Abstract

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.

Inventors:
;
Issue Date:
Research Org.:
Universities Research Association
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
335484
Patent Number(s):
5888113
Application Number:
PAN: 8-829,492
Assignee:
Universities Research Association, Inc., Washington, DC (United States)
DOE Contract Number:  
AC02-76CH03000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 30 Mar 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; DIAMONDS; CESIUM IODIDES; FABRICATION; FIELD EMISSION; ELECTRIC POTENTIAL; HIGH VACUUM; ELECTRON BEAMS; DISSOCIATION

Citation Formats

Anderson, D F, and Kwan, S W. Process for making a cesiated diamond film field emitter and field emitter formed therefrom. United States: N. p., 1999. Web.
Anderson, D F, & Kwan, S W. Process for making a cesiated diamond film field emitter and field emitter formed therefrom. United States.
Anderson, D F, and Kwan, S W. Tue . "Process for making a cesiated diamond film field emitter and field emitter formed therefrom". United States.
@article{osti_335484,
title = {Process for making a cesiated diamond film field emitter and field emitter formed therefrom},
author = {Anderson, D F and Kwan, S W},
abstractNote = {A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 30 00:00:00 EST 1999},
month = {Tue Mar 30 00:00:00 EST 1999}
}

Patent:
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