Process for making a cesiated diamond film field emitter and field emitter formed therefrom
Abstract
A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Universities Research Association
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 335484
- Patent Number(s):
- 5888113
- Application Number:
- PAN: 8-829,492
- Assignee:
- Universities Research Association, Inc., Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH03000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 30 Mar 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; DIAMONDS; CESIUM IODIDES; FABRICATION; FIELD EMISSION; ELECTRIC POTENTIAL; HIGH VACUUM; ELECTRON BEAMS; DISSOCIATION
Citation Formats
Anderson, D F, and Kwan, S W. Process for making a cesiated diamond film field emitter and field emitter formed therefrom. United States: N. p., 1999.
Web.
Anderson, D F, & Kwan, S W. Process for making a cesiated diamond film field emitter and field emitter formed therefrom. United States.
Anderson, D F, and Kwan, S W. Tue .
"Process for making a cesiated diamond film field emitter and field emitter formed therefrom". United States.
@article{osti_335484,
title = {Process for making a cesiated diamond film field emitter and field emitter formed therefrom},
author = {Anderson, D F and Kwan, S W},
abstractNote = {A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {3}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Technology: New Electron Emitters May Slim Down Computer Displays
journal, August 1996
- Hellemans, A.
- Science, Vol. 273, Issue 5279