skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Processing of materials for uniform field emission

Abstract

This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/{micro}m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 {micro}m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material. 2 figs.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321312
Patent Number(s):
5857882
Application Number:
PAN: 8-607,532
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 12 Jan 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; FIELD EMISSION; ELECTRON EMISSION; DIAMONDS; CARBON; GRAPHITE; SURFACE TREATMENTS; ION IMPLANTATION

Citation Formats

Pam, L S, Felter, T E, Talin, A, Ohlberg, D, Fox, C, and Han, S. Processing of materials for uniform field emission. United States: N. p., 1999. Web.
Pam, L S, Felter, T E, Talin, A, Ohlberg, D, Fox, C, & Han, S. Processing of materials for uniform field emission. United States.
Pam, L S, Felter, T E, Talin, A, Ohlberg, D, Fox, C, and Han, S. Tue . "Processing of materials for uniform field emission". United States.
@article{osti_321312,
title = {Processing of materials for uniform field emission},
author = {Pam, L S and Felter, T E and Talin, A and Ohlberg, D and Fox, C and Han, S},
abstractNote = {This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/{micro}m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 {micro}m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}