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Title: Method for altering the luminescence of a semiconductor

Abstract

A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

Inventors:
;
Issue Date:
Research Org.:
AT&T Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321306
Patent Number(s):
5,858,559
Application Number:
PAN: 7-964,739; TRN: 99:003337
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 440200; 426000; PA: EDB-99:031369; SN: 99002064432
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 12 Jan 1999
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; LIGHT EMITTING DIODES; LUMINESCENCE; SILICON; PHYSICAL RADIATION EFFECTS; MODIFICATIONS

Citation Formats

Barbour, J.C., and Dimos, D.B. Method for altering the luminescence of a semiconductor. United States: N. p., 1999. Web.
Barbour, J.C., & Dimos, D.B. Method for altering the luminescence of a semiconductor. United States.
Barbour, J.C., and Dimos, D.B. Tue . "Method for altering the luminescence of a semiconductor". United States.
@article{osti_321306,
title = {Method for altering the luminescence of a semiconductor},
author = {Barbour, J.C. and Dimos, D.B.},
abstractNote = {A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}