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Title: Process for forming silicon carbide films and microcomponents

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.
Inventors:
; ;
Issue Date:
OSTI Identifier:
321303
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 360601; 426000; PA: EDB-99:030631; SN: 99002064426
Patent Number(s):
US 5,861,346/A/
Application Number:
PAN: 8-507,916
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 19 Jan 1999
Research Org:
University of California
Sponsoring Org:
USDOE, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON CARBIDES; CRYSTAL GROWTH; MICROELECTRONIC CIRCUITS; FABRICATION; SUBSTRATES