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Title: Semiconductor bridge (SCB) detonator

Abstract

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

Inventors:
;
Issue Date:
Research Org.:
AT&T
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321250
Patent Number(s):
5861570
Application Number:
PAN: 8-636,626
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 19 Jan 1999
Country of Publication:
United States
Language:
English
Subject:
45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEFENSE; CHEMICAL EXPLOSIVES; DETONATORS; DESIGN; SEMICONDUCTOR DEVICES

Citation Formats

Bickes, Jr, R W, and Grubelich, M C. Semiconductor bridge (SCB) detonator. United States: N. p., 1999. Web.
Bickes, Jr, R W, & Grubelich, M C. Semiconductor bridge (SCB) detonator. United States.
Bickes, Jr, R W, and Grubelich, M C. Tue . "Semiconductor bridge (SCB) detonator". United States.
@article{osti_321250,
title = {Semiconductor bridge (SCB) detonator},
author = {Bickes, Jr, R W and Grubelich, M C},
abstractNote = {The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}