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Title: Impurity gettering in silicon using cavities formed by helium implantation and annealing

Abstract

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer. 4 figs.

Inventors:
; ;
Issue Date:
Research Org.:
AT&T Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321229
Patent Number(s):
5,840,590
Application Number:
PAN: 8-160,704; TRN: 99:003305
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 360605; 426000; PA: EDB-99:030749; SN: 99002058530
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 24 Nov 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON; IMPURITIES; GETTERING; ION IMPLANTATION; ANNEALING; CHEMICAL BONDS; HELIUM IONS; PHYSICAL RADIATION EFFECTS; CRYSTAL DEFECTS

Citation Formats

Myers, S.M. Jr., Bishop, D.M., and Follstaedt, D.M. Impurity gettering in silicon using cavities formed by helium implantation and annealing. United States: N. p., 1998. Web.
Myers, S.M. Jr., Bishop, D.M., & Follstaedt, D.M. Impurity gettering in silicon using cavities formed by helium implantation and annealing. United States.
Myers, S.M. Jr., Bishop, D.M., and Follstaedt, D.M. Tue . "Impurity gettering in silicon using cavities formed by helium implantation and annealing". United States.
@article{osti_321229,
title = {Impurity gettering in silicon using cavities formed by helium implantation and annealing},
author = {Myers, S.M. Jr. and Bishop, D.M. and Follstaedt, D.M.},
abstractNote = {Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {11}
}