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Title: Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication

Abstract

A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing. 8 figs.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of California (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321227
Patent Number(s):
5841236
Application Number:
PAN: 8-326,667
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 24 Nov 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; MINIATURIZATION; PLASMA GUNS; THIN FILMS; VACUUM SYSTEMS; SEMICONDUCTOR DEVICES

Citation Formats

Brown, I G, MacGill, R A, Galvin, J E, Ogletree, D F, and Salmeron, M. Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication. United States: N. p., 1998. Web.
Brown, I G, MacGill, R A, Galvin, J E, Ogletree, D F, & Salmeron, M. Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication. United States.
Brown, I G, MacGill, R A, Galvin, J E, Ogletree, D F, and Salmeron, M. Tue . "Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication". United States.
@article{osti_321227,
title = {Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication},
author = {Brown, I G and MacGill, R A and Galvin, J E and Ogletree, D F and Salmeron, M},
abstractNote = {A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {11}
}