Photodetectors using III-V nitrides
Abstract
A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Radiation Monitoring Devices
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 321214
- Patent Number(s):
- 5847397
- Application Number:
- PAN: 8-681,971
- Assignee:
- Boston Univ., MA (United States)
- DOE Contract Number:
- FG02-94ER81843
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 8 Dec 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; PHOTODETECTORS; SEMICONDUCTOR MATERIALS; DESIGN; NITRIDES; ELECTRICAL PROPERTIES
Citation Formats
Moustakas, T D. Photodetectors using III-V nitrides. United States: N. p., 1998.
Web.
Moustakas, T D. Photodetectors using III-V nitrides. United States.
Moustakas, T D. Tue .
"Photodetectors using III-V nitrides". United States.
@article{osti_321214,
title = {Photodetectors using III-V nitrides},
author = {Moustakas, T D},
abstractNote = {A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 08 00:00:00 EST 1998},
month = {Tue Dec 08 00:00:00 EST 1998}
}
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