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Title: Efficient growth of HTS films with volatile elements

Abstract

A system is disclosed for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source. 3 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321202
Patent Number(s):
5851955
Application Number:
PAN: 8-886,243
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 22 Dec 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HIGH-TC SUPERCONDUCTORS; THALLIUM OXIDES; CRYSTAL GROWTH; ZONE MELTING; FURNACES

Citation Formats

Siegal, M P, Overmyer, D L, and Dominguez, F. Efficient growth of HTS films with volatile elements. United States: N. p., 1998. Web.
Siegal, M P, Overmyer, D L, & Dominguez, F. Efficient growth of HTS films with volatile elements. United States.
Siegal, M P, Overmyer, D L, and Dominguez, F. Tue . "Efficient growth of HTS films with volatile elements". United States.
@article{osti_321202,
title = {Efficient growth of HTS films with volatile elements},
author = {Siegal, M P and Overmyer, D L and Dominguez, F},
abstractNote = {A system is disclosed for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}