Efficient growth of HTS films with volatile elements
Abstract
A system is disclosed for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source. 3 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 321202
- Patent Number(s):
- 5851955
- Application Number:
- PAN: 8-886,243
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 22 Dec 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; HIGH-TC SUPERCONDUCTORS; THALLIUM OXIDES; CRYSTAL GROWTH; ZONE MELTING; FURNACES
Citation Formats
Siegal, M P, Overmyer, D L, and Dominguez, F. Efficient growth of HTS films with volatile elements. United States: N. p., 1998.
Web.
Siegal, M P, Overmyer, D L, & Dominguez, F. Efficient growth of HTS films with volatile elements. United States.
Siegal, M P, Overmyer, D L, and Dominguez, F. Tue .
"Efficient growth of HTS films with volatile elements". United States.
@article{osti_321202,
title = {Efficient growth of HTS films with volatile elements},
author = {Siegal, M P and Overmyer, D L and Dominguez, F},
abstractNote = {A system is disclosed for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}
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