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Title: Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

Abstract

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Inventors:
;
Issue Date:
Research Org.:
Sandia Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321182
Patent Number(s):
5,840,620
Application Number:
PAN: 8-577,851
Assignee:
SNL; SCA: 360606; 360601; 426000; PA: EDB-99:030846; SN: 99002058529
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 24 Nov 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; INDIUM OXIDES; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICES; ANNEALING; REPAIR; FABRICATION

Citation Formats

Seager, C H, and Evans, Jr, J T. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States: N. p., 1998. Web.
Seager, C H, & Evans, Jr, J T. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States.
Seager, C H, and Evans, Jr, J T. Tue . "Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures". United States.
@article{osti_321182,
title = {Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures},
author = {Seager, C H and Evans, Jr, J T},
abstractNote = {A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {11}
}