Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures
Abstract
A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 321182
- Patent Number(s):
- 5840620
- Application Number:
- PAN: 8-577,851
- Assignee:
- SNL; SCA: 360606; 360601; 426000; PA: EDB-99:030846; SN: 99002058529
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 24 Nov 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; INDIUM OXIDES; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICES; ANNEALING; REPAIR; FABRICATION
Citation Formats
Seager, C H, and Evans, Jr, J T. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States: N. p., 1998.
Web.
Seager, C H, & Evans, Jr, J T. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States.
Seager, C H, and Evans, Jr, J T. Tue .
"Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures". United States.
@article{osti_321182,
title = {Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures},
author = {Seager, C H and Evans, Jr, J T},
abstractNote = {A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {11}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.