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Title: Photodetector with absorbing region having resonant periodic absorption between reflectors

A photodetector is disclosed that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer. 11 figs.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
27728
Assignee:
Dept. of Energy, Washington, DC (United States) SNL; SCA: 426000; 440000; PA: EDB-95:058932; SN: 95001354471
Patent Number(s):
US 5,389,797/A/
Application Number:
PAN: 7-943,823
Contract Number:
AC04-76DP00789
Resource Relation:
Other Information: PBD: 14 Feb 1995
Research Org:
AT&T Corporation
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; PHOTODETECTORS; DESIGN; ELECTROMAGNETIC RADIATION; CAVITY RESONATORS; ABSORPTION; SEMICONDUCTOR MATERIALS; INDIUM ARSENIDES; GALLIUM ARSENIDES

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