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Title: Monolithic multi-color light emission/detection device

Abstract

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.

Inventors:
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
27726
Patent Number(s):
5,391,896
Application Number:
PAN: 7-939,003
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 21 Feb 1995
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; DESIGN; INDIUM PHOSPHIDES; GALLIUM ARSENIDES; SEMICONDUCTOR JUNCTIONS; RADIATION DETECTION; USES; VISIBLE RADIATION

Citation Formats

Wanlass, M W. Monolithic multi-color light emission/detection device. United States: N. p., 1995. Web.
Wanlass, M W. Monolithic multi-color light emission/detection device. United States.
Wanlass, M W. Tue . "Monolithic multi-color light emission/detection device". United States.
@article{osti_27726,
title = {Monolithic multi-color light emission/detection device},
author = {Wanlass, M W},
abstractNote = {A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {2}
}