Global to push GA events into
skip to main content

Title: Method for forming silicon on a glass substrate

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.
Inventors:
Issue Date:
OSTI Identifier:
27722
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 426000; PA: EDB-95:058924; SN: 95001354441
Patent Number(s):
US 5,395,481/A/
Application Number:
PAN: 8-137,401
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 7 Mar 1995
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; MICROELECTRONICS; SEMICONDUCTOR DEVICES; FABRICATION; SILICON; MONOCRYSTALS; DOPED MATERIALS; ETCHING; DISPLAY DEVICES; MEASURING INSTRUMENTS

Similar records in DOepatents and OSTI.GOV collections: