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Title: Method for accurate growth of vertical-cavity surface-emitting lasers

The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.
Inventors:
; ;
Issue Date:
OSTI Identifier:
27717
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426002; PA: EDB-95:058942; SN: 95001354413
Patent Number(s):
US 5,397,739/A/
Application Number:
PAN: 8-099,035
Contract Number:
AC04-76DP00789
Resource Relation:
Other Information: PBD: 14 Mar 1995
Research Org:
AT&T Corporation
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; SEMICONDUCTOR MATERIALS; PROCESS CONTROL

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