skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for accurate growth of vertical-cavity surface-emitting lasers

Abstract

The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.

Inventors:
; ;
Issue Date:
Research Org.:
AT&T Corporation
OSTI Identifier:
27717
Patent Number(s):
5,397,739
Application Number:
PAN: 8-099,035
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 14 Mar 1995
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; SEMICONDUCTOR MATERIALS; PROCESS CONTROL

Citation Formats

Chalmers, S A, Killeen, K P, and Lear, K L. Method for accurate growth of vertical-cavity surface-emitting lasers. United States: N. p., 1995. Web.
Chalmers, S A, Killeen, K P, & Lear, K L. Method for accurate growth of vertical-cavity surface-emitting lasers. United States.
Chalmers, S A, Killeen, K P, and Lear, K L. Tue . "Method for accurate growth of vertical-cavity surface-emitting lasers". United States.
@article{osti_27717,
title = {Method for accurate growth of vertical-cavity surface-emitting lasers},
author = {Chalmers, S A and Killeen, K P and Lear, K L},
abstractNote = {The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {3}
}