Deposition of device quality low H content, amorphous silicon films
Abstract
A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 27691
- Patent Number(s):
- 5397737
- Application Number:
- PAN: 8-253,840
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 14 Mar 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; FABRICATION; AMORPHOUS STATE; SILANES; CONCENTRATION RATIO; HYDROGEN
Citation Formats
Mahan, A. H., Carapella, J. C., and Gallagher, A. C. Deposition of device quality low H content, amorphous silicon films. United States: N. p., 1995.
Web.
Mahan, A. H., Carapella, J. C., & Gallagher, A. C. Deposition of device quality low H content, amorphous silicon films. United States.
Mahan, A. H., Carapella, J. C., and Gallagher, A. C. Tue .
"Deposition of device quality low H content, amorphous silicon films". United States.
@article{osti_27691,
title = {Deposition of device quality low H content, amorphous silicon films},
author = {Mahan, A. H. and Carapella, J. C. and Gallagher, A. C.},
abstractNote = {A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 14 00:00:00 EST 1995},
month = {Tue Mar 14 00:00:00 EST 1995}
}
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