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Title: Deposition of device quality low H content, amorphous silicon films

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.
Inventors:
; ;
Issue Date:
OSTI Identifier:
27691
Assignee:
Dept. of Energy, Washington, DC (United States) CHO; SCA: 360601; 140501; PA: EDB-95:058102; SN: 95001354415
Patent Number(s):
US 5,397,737/A/
Application Number:
PAN: 8-253,840
Contract Number:
AC02-83CH10093
Resource Relation:
Other Information: PBD: 14 Mar 1995
Research Org:
Midwest Research Institute; National Renewable Energy Lab. (NREL), Golden, CO (United States); Solar Energy Research Institute
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; FABRICATION; AMORPHOUS STATE; SILANES; CONCENTRATION RATIO; HYDROGEN

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