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Title: Deposition of device quality low H content, amorphous silicon films

Abstract

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States); Solar Energy Research Institute
Sponsoring Org.:
USDOE
OSTI Identifier:
27691
Patent Number(s):
5,397,737
Application Number:
PAN: 8-253,840
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 14 Mar 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; FABRICATION; AMORPHOUS STATE; SILANES; CONCENTRATION RATIO; HYDROGEN

Citation Formats

Mahan, A H, Carapella, J C, and Gallagher, A C. Deposition of device quality low H content, amorphous silicon films. United States: N. p., 1995. Web.
Mahan, A H, Carapella, J C, & Gallagher, A C. Deposition of device quality low H content, amorphous silicon films. United States.
Mahan, A H, Carapella, J C, and Gallagher, A C. Tue . "Deposition of device quality low H content, amorphous silicon films". United States.
@article{osti_27691,
title = {Deposition of device quality low H content, amorphous silicon films},
author = {Mahan, A H and Carapella, J C and Gallagher, A C},
abstractNote = {A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {3}
}