Three dimensional amorphous silicon/microcrystalline silicon solar cells
Abstract
Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 264558
- Patent Number(s):
- 5538564
- Application Number:
- PAN: 8-214,750
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 23 Jul 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SILICON SOLAR CELLS; DESIGN; AMORPHOUS STATE; CRYSTAL STRUCTURE; OPERATION; FABRICATION; P-TYPE CONDUCTORS; N-TYPE CONDUCTORS; DOPED MATERIALS; CHARGE COLLECTION; ENERGY EFFICIENCY
Citation Formats
Kaschmitter, J L. Three dimensional amorphous silicon/microcrystalline silicon solar cells. United States: N. p., 1996.
Web.
Kaschmitter, J L. Three dimensional amorphous silicon/microcrystalline silicon solar cells. United States.
Kaschmitter, J L. Tue .
"Three dimensional amorphous silicon/microcrystalline silicon solar cells". United States.
@article{osti_264558,
title = {Three dimensional amorphous silicon/microcrystalline silicon solar cells},
author = {Kaschmitter, J L},
abstractNote = {Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {7}
}
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