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Title: Three dimensional amorphous silicon/microcrystalline silicon solar cells

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.
Inventors:
Issue Date:
OSTI Identifier:
264558
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 140501; PA: EDB-96:118272; SN: 96001625914
Patent Number(s):
US 5,538,564/A/
Application Number:
PAN: 8-214,750
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 23 Jul 1996
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; DESIGN; AMORPHOUS STATE; CRYSTAL STRUCTURE; OPERATION; FABRICATION; P-TYPE CONDUCTORS; N-TYPE CONDUCTORS; DOPED MATERIALS; CHARGE COLLECTION; ENERGY EFFICIENCY

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