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Title: Process for producing cadmium sulfide on a cadmium telluride surface

Abstract

A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
264548
Patent Number(s):
5,541,118
Application Number:
PAN: 8-446,466
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 30 Jul 1996
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CADMIUM SULFIDE SOLAR CELLS; FABRICATION; CADMIUM TELLURIDE SOLAR CELLS; CADMIUM TELLURIDES; CHEMICAL REACTIONS; HYDROGEN SULFIDES; CADMIUM SULFIDES; SYNTHESIS

Citation Formats

Levi, D H, Nelson, A J, and Ahrenkiel, R K. Process for producing cadmium sulfide on a cadmium telluride surface. United States: N. p., 1996. Web.
Levi, D H, Nelson, A J, & Ahrenkiel, R K. Process for producing cadmium sulfide on a cadmium telluride surface. United States.
Levi, D H, Nelson, A J, and Ahrenkiel, R K. Tue . "Process for producing cadmium sulfide on a cadmium telluride surface". United States.
@article{osti_264548,
title = {Process for producing cadmium sulfide on a cadmium telluride surface},
author = {Levi, D H and Nelson, A J and Ahrenkiel, R K},
abstractNote = {A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {7}
}